Compound Semiconductor Materials

Zinc telluride is a group II-VI compound with the chemical formula ZnTe. Red-brown zinc telluride is produced by heating tellurium and zinc together in a hydrogen atmosphere and then sublimating.

Gallium(III) telluride (Ga2Te3) is a chemical compound classified as a metal telluride. At room temperature gallium(III) telluride is an odorless, black, brittle crystalline solid and is a semiconductor of the III-VI type that crystallizes in a lattice structure.

Cadmium telluride, with the symbol CdTe, atomic weight is 250, is the black cubic crystal, toxic.

Chemical formula CdTe. Molecular weight 240.00. Black cubic crystals. Poisonous! The melting point is 1041℃, and the decomposition occurs at higher temperature, and the relative density is 6.2015.

Cadmium zinc telluride, with the symbol of CdZnTe, the abbreviation is CZT. CZT crystal is Wide Bandgap II-VI Compound Semiconductors, can seen to be melted by CdTe and ZnTe solid.

Bismuth telluride is a compound of tellurium and bismuth. It is a narrow-gap layered semiconductor with a triangular unit cell. It is mainly found in the rare mineral bismuth telluride.

Bismuth telluride is a semiconductor material with good conductivity, but poor thermal conductivity. It is mainly used for semiconductors, electronic refrigeration and power generation.

Germanium oxide, the symbol is GeO2, atomic weight is 104.59, which has insoluble and soluble variant, the former is colorless tetragonal prism, the melting point is 1086±5℃, density is 6.23g/cm³

Germanium oxide is a white powder, hexagonal, tetragonal or amorphous solid. Hexagonal crystal system: relative density 4.228, melting point (1115±4)℃.

Used as a high-purity analytical reagent, for the preparation of semiconductor materials in the electronics industry.

Gallium(III) oxide, ≥99.99% trace metals basis. Density is 5.88 g/mL at 25 °C.

Above 710 ℃, melting bismuth oxide can erode or dissolve metal oxides. The main purpose: the electronics industry; pressure-sensitive resistors

Bismuth oxide(4N), it is a highly insoluble thermally stable Bismuth source suitable for glass, optic and ceramic applications.

Indium Trioxide is white or light yellow amorphous and crystalline powder. Relative density 7.179. Melting point 1910 ℃. Volatile above 850°C.

Indium Trioxide is white or light yellow amorphous and crystalline powder. Melting point 2000 °C, density 7.18 g / ml at 25 °C, vapor pressure < 0.01 mm Hg (25 °C).

Tellurium Dioxide is white crystal. Tetragonal crystal structure, yellow when heated, it will be dark yellow red when melted, it is an amphoteric compound.

The chemical formula of tellurium dioxide is TeO2. Molecular weight 159.60. Colorless crystal, melting point 732.6 ℃. There are two crystal forms: it is made from nitric acid solution and belongs to the tetragonal crystal system, similar to octahedron.